P. D. Augustus

Arsenic precipitation at dislocations in GaAs substrate material

A.G. Cullis, P. D. Augustus, D. J. Stirland · Journal of Applied Physics · 1980 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +15

The Detection of Silicon-Oxynitride Layers on the Surfaces of Silicon-Nitride Films by Auger Electron Emission

H. G. Maguire, P. D. Augustus · Journal of The Electrochemical Society · 1972 · 46 citations

Natural Sciences, Materials Engineering, Materials Science +16

Metal-induced dislocation nucleation for metastable SiGe/Si

V. Higgs, P. Kightley, P.J. Goodhew et al. · Applied Physics Letters · 1991 · 33 citations

Engineering, Materials Engineering, Materials Science +17

A mechanism of misfit dislocation reaction for GaInAs strained layers grown onto off-axis GaAs substrates

P. Kightley, P.J. Goodhew, R. R. Bradley et al. · Journal of Crystal Growth · 1991 · 29 citations

Engineering, Materials Engineering, Materials Science +14

Elemental boron doping behavior in silicon molecular beam epitaxy

C. P. Parry, S. M. Newstead, R. D. Barlow et al. · Applied Physics Letters · 1991 · 27 citations

Engineering, Materials Engineering, Materials Science +17