C. P. Parry

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

Michael J. Palmer, G. Braithwaite, T. J. Grasby et al. · Applied Physics Letters · 2001 · 45 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

C. P. Parry, R. A. A. Kubiak, S. M. Newstead et al. · Journal of Applied Physics · 1992 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Andrew P. Knights, R. Gwilliam, B.J. Sealy et al. · Journal of Applied Physics · 2001 · 34 citations

Natural Sciences, Materials Science, Physics +17

Defect imaging in ultra-thin SiGe (100) strain relaxed buffers

Jérémie Werner, K. Lyutovich, C. P. Parry · The European Physical Journal Applied Physics · 2004 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +17

Elemental boron doping behavior in silicon molecular beam epitaxy

C. P. Parry, S. M. Newstead, R. D. Barlow et al. · Applied Physics Letters · 1991 · 27 citations

Engineering, Materials Engineering, Materials Science +17