P. Kightley - Concepedia

Author

P. Kightley

University of Liverpool

Also Known As

P Kightley, P. Kightley, Philip Kightley

Publications

407

Citations

H-Index

Concepts

All Affiliations

University of Liverpool King's College London University of Sheffield

About

P. Kightley is an author at University of Liverpool specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	404
2	Applied Physics	13	14	404
3	Materials Science	7	7	279
4	Electrical Engineering	6	6	154
5	Materials Engineering	3	3	102

P. Kightley

Publications

404

Citations

H-Index

Page 1

	Year	Citations
Characterization of epitaxial and oxidation-induced stacking faults in silicon: The influence of transition-metal contamination V. Higgs, M. Goulding, A. Brinklow, Applied Physics Letters Transition-metal ContaminationEngineeringOxidation-induced Stacking FaultsOptoelectronic DevicesSilicon On Insulator	1992	58
Dynamic optical reflectivity to monitor the real-time metalorganic molecular beam epitaxial growth of AlGaAs layers T. Farrell, John V. Armstrong, P. Kightley Applied Physics Letters Aluminium NitrideOptical MaterialsEngineeringCrystal Growth TechnologyAlgaas Layers	1991	47
Characterisation of Dislocations in the Presence of Transition Metal Contamination V. Higgs, E C Lightowlers, C. E. Norman, Materials science forum Materials ScienceEngineeringDislocation InteractionSevere Plastic DeformationCorrosion	1992	46
CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors T.B. Joyce, T.J. Bullough, P. Kightley, Journal of Crystal Growth Materials ScienceMaterials EngineeringAmine-alane PrecursorsEngineeringCrystal Growth Technology	1992	42
Metal-induced dislocation nucleation for metastable SiGe/Si V. Higgs, P. Kightley, P.J. Goodhew, Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringDislocation InteractionCrystalline Defects	1991	33
A mechanism of misfit dislocation reaction for GaInAs strained layers grown onto off-axis GaAs substrates P. Kightley, P.J. Goodhew, R. R. Bradley, Journal of Crystal Growth Electrical EngineeringEngineeringDislocation InteractionApplied PhysicsOff-axis Gaas Substrates	1991	29
Dislocation Related D-Band Luminescence; the Effects of Transition Metal Contamination V. Higgs, E C Lightowlers, P. Kightley MRS Proceedings Materials ScienceMaterials EngineeringPhotoluminescenceEngineeringDislocation Interaction	1989	27
Growth of strained InAs/InP quantum wells by molecular beam epitaxy M. Hopkinson, J. P. R. David, P.A. Claxton, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesBand GapSemiconductor Nanostructures	1992	26
Monitoring real-time CBE growth of GaAs and AlGaAs using dynamic optical reflectivity John V. Armstrong, T. Farrell, T.B. Joyce, Journal of Crystal Growth PhotonicsElectrical EngineeringOptical MaterialsEngineeringOptical Properties	1992	25
Effect of misfit dislocations on leakage currents in strained multiquantum well structures J.P.R. David, Y. H. Chen, R. Grey, Applied Physics Letters Electrical EngineeringEngineeringMisfit DislocationsPhysicsStrained Multiple Quantum	1995	19

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