CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors - Concepedia

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CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors

42

Citations

7

References

1992

Year

T.B. Joyce, T.J. Bullough, P. Kightley, Christopher J. Kiely, Yanhui Xing, P.J. Goodhew

Journal of Crystal Growth

Materials ScienceMaterials EngineeringAmine-alane PrecursorsEngineeringCrystal Growth TechnologyApplied PhysicsCbe GrowthMolecular Beam EpitaxyCrystallographyCompound Semiconductor

References

	Year	Citations

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