IEEE Transactions on Electron Devices · 1988 · 13 citations · 11 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignIntegrated Circuit FabricationIon ImplantationMetal-oxide-semiconductor Field-effect TransistorsCmos Fabrication ProcessesCmos OscillatorsCmos ScalingDeposition ProcessesEtchingGate Oxide InterfacesGate OxidesHigh Performance
Processing issues including Mo deposition, gate etching, ion implant channeling, and integration of a Mo gate with high-temperature processing are discussed. Methods for addressing these issues are described. A 0.8- mu n Mo-gate CMOS process incorporating these methods has been developed. Submicrometer Mo-gate NMOS and PMOS devices and 0.8- mu m CMOS ring oscillator results are presented. The high performance of these devices and circuits demonstrates the potential of a Mo gate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A new tungsten gate process for VLSI applications
Setsuo Iwata, Naoki Yamamoto, N. Kobayashi et al. · IEEE Transactions on Electron Devices · 1984 · 61 citations
Self-Registered Molybdenum-Gate MOSFET
D.M. Brown, W.E. Engeler, M. Garfinkel et al. · Journal of The Electrochemical Society · 1968 · 48 citations