N. Kobayashi

Specific heat study of heavily P doped Si

N. Kobayashi, Satoshi Ikehata, S. Kobayashi et al. · Solid State Communications · 1977 · 129 citations

Engineering, Materials Engineering, Materials Science +12

A new tungsten gate process for VLSI applications

Setsuo Iwata, Naoki Yamamoto, N. Kobayashi et al. · IEEE Transactions on Electron Devices · 1984 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Molecular modeling of low-k films of carbon-doped silicon oxides for theoretical investigations of the mechanical and dielectric properties

Nobuo Tajima, Takahisa Ohno, Tomoyuki Hamada et al. · Applied Physics Letters · 2006 · 34 citations

Natural Sciences, Materials Science, Physics +17

Fabrication of Highly Reliable Tungsten Gate MOS VLSI's

Naoki Yamamoto, Haruki Kume, Setsuo Iwata et al. · Journal of The Electrochemical Society · 1986 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Improvement of Flux Pinning Properties for Hafnium-Doped Gd123 Thin Films Fabricated by a Fluorine-Free MOD Method

N. Kobayashi, Ryusuke Kita, Osuke Miura · IEEE Transactions on Applied Superconductivity · 2017 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +12