Growth and structural properties of epitaxial Ga<i>x</i>In1−<i>x</i>P on InP

Abstract

The growth of heteroepitaxial GaxIn1−xP on InP for 0&amp;lt;x&amp;lt;0.25 has been carried out by low-pressure metalorganic chemical vapor deposition and characterized by high-resolution x-ray diffraction and low-temperature photoluminescence measurements. The x-ray data indicate that the epilayers are under biaxial tensile strain and that, for samples with x&amp;lt;0.05, the lattice mismatch is accommodated almost completely by tetragonal distortions. From photoluminescence measurements, the energy band gap is found to vary monotonically with the Ga concentration; it also shifts linearly with the elastic strain in the layer. The calculated value of 0.99×104 meV per unit strain is in good agreement with that predicted from elasticity theory.