A. Bensaada

Misfit strain, relaxation, and band-gap shift in Ga<i>x</i>In1−<i>x</i>P/InP epitaxial layers

A. Bensaada, A. Chennouf, R. W. Cochrane et al. · Journal of Applied Physics · 1994 · 38 citations

Engineering, Optical Absorption, Luminescence Property +17

Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression

P. Cova, R. A. Masut, J. F. Currie et al. · Canadian Journal of Physics · 1991 · 35 citations

Engineering, Crystal Growth Technology, Epitaxial Layers +16

Growth and structural properties of epitaxial Ga<i>x</i>In1−<i>x</i>P on InP

A. Bensaada, A. Chennouf, R. W. Cochrane et al. · Journal of Applied Physics · 1992 · 17 citations

Materials Science, Energy Band Gap, Structural Properties +12

Band alignment in Ga<i>x</i>In1−<i>x</i>P/InP heterostructures

A. Bensaada, Joseph Graham, J. L. Brebner et al. · Applied Physics Letters · 1994 · 16 citations

Materials Science, Wide-bandgap Semiconductor, Ii-vi Semiconductor +14

Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy

R. Y.-F. Yip, A. Aı̈t-Ouali, A. Bensaada et al. · Journal of Applied Physics · 1997 · 16 citations

Optical Materials, Engineering, Optical Modulator Devices +23