A. Chennouf

Misfit strain, relaxation, and band-gap shift in Ga<i>x</i>In1−<i>x</i>P/InP epitaxial layers

A. Bensaada, A. Chennouf, R. W. Cochrane et al. · Journal of Applied Physics · 1994 · 38 citations

Engineering, Optical Absorption, Luminescence Property +17

Structural and optical characterization of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth

Yahya Ababou, P. Desjardins, A. Chennouf et al. · Journal of Applied Physics · 1996 · 18 citations

Optical Materials, Engineering, Heteroepitaxial Inp Layers +17

Growth and structural properties of epitaxial Ga<i>x</i>In1−<i>x</i>P on InP

A. Bensaada, A. Chennouf, R. W. Cochrane et al. · Journal of Applied Physics · 1992 · 17 citations

Materials Science, Energy Band Gap, Structural Properties +12

Band alignment in Ga<i>x</i>In1−<i>x</i>P/InP heterostructures

A. Bensaada, Joseph Graham, J. L. Brebner et al. · Applied Physics Letters · 1994 · 16 citations

Materials Science, Wide-bandgap Semiconductor, Ii-vi Semiconductor +14

Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures

A. Aı̈t-Ouali, A. Chennouf, R. Y.-F. Yip et al. · Journal of Applied Physics · 1998 · 16 citations

Quantum Photonics, Engineering, Optical Absorption Peaks +20