Visible luminescence of erbium oxide layers grown on crystalline and amorphous silicon

Abstract

Visible luminescence from erbium oxide layers grown on crystalline and amorphous silicon (c-Si and a-Si) has been investigated. The results show strong red and green cathodoluminescence bands due to intraionic Er3+ radiative transitions at room temperature. The use of c-Si or a-Si as substrate led to a red or green dominant emission, respectively, which has been explained in terms of the oxygen content in the substrate. The results obtained from samples grown in different atmospheres also support this assumption.