A comparative study of MeV and medium-energy ion implantation into III–V compounds

Axial dechanneling

Konrad Gärtner, K. Hehl, Gerald Schlotzhauer · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1984 · 88 citations

Damage calculation and measurement for GaAs amorphized by Si implantation

W. G. Opyd, J. F. Gibbons, J. C. Bravman et al. · Applied Physics Letters · 1986 · 39 citations

Engineering, Materials Engineering, Materials Science +17

MeV B compensation implants into <i>n</i>-type GaAs and InP

Ravi K. Nadella, Jayadev Vellanki, Mulpuri V. Rao et al. · Journal of Applied Physics · 1992 · 18 citations

Engineering, Electrical Engineering, Materials Science +16

Ion-beam induced epitaxial crystallization of III–V compound semiconductors

M. C. Ridgway, S.T. Johnson, R. G. Elliman · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 15 citations

Engineering, Materials Engineering, Materials Science +14

Comparison of MeV-implanted GaAs and InP

T. Bachmann, S. Schippel, E. Wendler et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1994 · 13 citations

Engineering, Electrical Engineering, Materials Science +12