S.T. Johnson

Ion beam induced epitaxial crystallisation of silicon

R. G. Elliman, S.T. Johnson, A.P. Pogany et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 47 citations

Natural Sciences, Materials Engineering, Materials Science +13

Demonstration of scaled (⩾0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect

Scott R. Summerfelt, T. S. Moise, Guoqiang Xing et al. · Applied Physics Letters · 2001 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs

S.T. Johnson, J. S. Williams, E. Nygren et al. · Journal of Applied Physics · 1988 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +15

Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs

S. J. Pearton, J. S. Williams, K. T. Short et al. · Journal of Applied Physics · 1989 · 32 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Ion beam induced epitaxy of (100) and (111) GaAs

S.T. Johnson, R. G. Elliman, J. S. Williams · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1989 · 25 citations

Engineering, Materials Engineering, Materials Science +10