Concepedia

Ion beam induced epitaxial crystallisation of silicon

R. G. Elliman, S.T. Johnson, A.P. Pogany, J. S. Williams

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 47 citations · 12 references

DOI

Concepts

References

12

Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

L. Csepregi, Eamonn Kennedy, J. W. Mayer et al. · Journal of Applied Physics · 1978 · 585 citations

, , +17

Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ions

L. Csepregi, Eamonn Kennedy, T. J. Gallagher et al. · Journal of Applied Physics · 1977 · 443 citations

, , +17

Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers

Eamonn Kennedy, L. Csepregi, J. W. Mayer et al. · Journal of Applied Physics · 1977 · 324 citations

, , +17

Defects in semiconductors

J. S. Blakemore · Materials Research Bulletin · 1981 · 310 citations

, , +15

Role of Electronic Processes in Epitaxial Recrystallization of Amorphous Semiconductors

J. S. Williams, R. G. Elliman · Physical Review Letters · 1983 · 149 citations

, , +17