Scott R. Summerfelt

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Si Joon Kim, Dushyant Narayan, Jae‐Gil Lee et al. · Applied Physics Letters · 2017 · 286 citations

Engineering, Low Thermal Budget, Stress-induced Crystallization +16

High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

A. I. Kingon, S. K. Streiffer, C. Basceri et al. · MRS Bulletin · 1996 · 228 citations

Dynamic Random-access Memories, Electrical Engineering, Engineering +6

Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

Stefan Mueller, Scott R. Summerfelt, Johannes Müller et al. · IEEE Electron Device Letters · 2012 · 161 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Si Joon Kim, Jaidah Mohan, Jaebeom Lee et al. · Applied Physics Letters · 2018 · 155 citations

Materials Science, Dielectric Properties, Engineering +12

A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process

H. McAdams, R. Acklin, T.G.W. Blake et al. · IEEE Journal of Solid-State Circuits · 2004 · 119 citations

64-Mb Embedded Fram, Non-volatile Memory, Engineering +17