Concepedia

LP-MOCVD growth of GaN on silicon substrates—comparison between AlAs and ZnO nucleation layers

A. Strittmatter, A. Krost, V. Türck, Martin Straßburg, D. Bimberg, J. Bläsing, Thomas Hempel, J. Christen, B. Neubauer, Dagmar Gerthsen,

Materials Science and Engineering B · 1999 · 18 citations · 3 references

DOI

Concepts

References

3

Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1998 · 336 citations

, , +17

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Theeradetch Detchprohm, K. Hiramatsu, Hiroshi Amano et al. · Applied Physics Letters · 1992 · 224 citations

, , +17

Low-temperature metalorganic chemical vapor deposition of InP on Si(001)

Marius Grundmann, A. Krost, D. Bimberg · Applied Physics Letters · 1991 · 97 citations

, , +17