2013 · 11 citations · 4 references
Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringStable Long-term OperationHigh Voltage EngineeringPower DeviceApplied PhysicsPower Semiconductor DeviceSingle Event EffectsAvalanche LimitAvalanche RatingPower ElectronicsPower SemiconductorsMicroelectronicsUltra-high VoltageSic Pin RectifiersPower Electronic Devices
This paper reports on ultra-high voltage, >15 kV SiC PiN rectifiers exhibiting >95% of the avalanche rating and 115 V/μm. This is one of a few reports on > 15 kV blocking voltages measured on any single semiconductor device, and the highest percentage of the avalanche limit ever reported on devices fabricated on > 100 μm thick SiC epilayers. Excellent stability of on-state voltage drop (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</sub> ) is displayed by 5.76 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and large-area, 41 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> PiN rectifiers, when continually biased at high current densities for several days. The impact of carrier lifetime on the device performance for SiC bipolar devices with ultra-thick (≥100 μm) base layers is investigated by comparing I-V-T characteristics of SiC PiN rectifiers fabricated on 100 μm and 130 μm thick epilayers.
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Ionization rates and critical fields in 4H silicon carbide
Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 397 citations
Electrical Engineering, Epitaxial P-n Diodes, Engineering +13