A high speed electron beam lithography system

Abstract

The Hewlett–Packard electron beam lithography system is described. The system is capable of being used either for direct writing on a wafer or for mask generation. It has been designed for high throughput production applications with data rates up to 300 MHz, using a field emitter electron source, a modified raster scan, and electrostatic deflectors. Deflection field aberrations are corrected so that patterns up to 5 in. square may be exposed with layer to layer registration better than 0.13 microns. The system architecture and design constraints will be discussed.