Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations - Concepedia

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Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations

21

Citations

16

References

2004

Year

Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou

Solid-State Electronics

Electrical EngineeringEngineeringHigh Voltage EngineeringApplied PhysicsPower Semiconductor DeviceEdge TerminationsMicroelectronicsSemiconductor Device

References

	Year	Citations

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