Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers

Abstract

This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (/spl lambda/=0.78-0.85 μm). High characteristic temperature T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> (200 K) and T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (/spl Delta/a/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 μm. The high T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> and T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL's with compressively strained InGaAsP-active layers and conventional DBR's is also discussed.