Short-wavelength (0.7 μm>λ>0.78 μm) high-power InGaAsP-active diode lasers

Abstract

Short-wavelength Al-free active-region compressively strained (Δa/a = 1.6%) InGaAsP single-quantum-well diode lasers have been optimized for high continuous-wave (CW) output powers. The use of a highly misoriented substrate is shown to improve the low-temperature spectral characteristics of the active quantum well and result in higher laser performance. By employing strain compensated active regions and growth on highly misoriented substrates, record-high characteristic temperature coefficients T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> (115-125 K) and T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> (400-500 K) are achieved for this wavelength region (λ = 0.73 μm). A broad waveguide laser design with In/sub 0.5/(Ga/sub 0.5/Al/sub 0.5/)/sub 0.5/P cladding layers is utilized to achieve CW output powers of 3.2 W (100-μm wide, L = 1 mm), with stable operation demonstrated at 0.5-W CW.