Bulletin of the Polish Academy of Sciences Technical Sciences · 2011 · 12 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingHeat ConductionSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsAmbient Temperature EffectsCurrentsDiode Current-voltage CharacteristicsSelf-heating EffectsSelf-heating ModelingSilicon CarbideSilicon Carbide (Sic) MaterialsTemperature Dependence Of Diodes
The isothermal and non-isothermal characteristics of silicon carbide Schottky diodes in the wide range of currents and ambient temperatures are investigated in this paper. The measurements of the diodes characteristics have been performed with the use of a pulse method, with fast registration of measurement points after the diode current turning on, or with the use of a fully static method, in which the self-heating phenomenon is taken into account. Apart from the measurements, the series of numerical experiments, giving the isothermal and non-isothermal characteristics as a result, were executed. The complex, accurate numerical procedures as well as simplified analytical calculations were implemented. A good conformity of all calculation and measurement results have been obtained.
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