Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

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Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In<i>x</i>Ga1−<i>x</i>As on GaAs(100)

Supratik Guha, A. Madhukar, K. C. Rajkumar · Applied Physics Letters · 1990 · 663 citations

Natural Sciences, Materials Science, Physics +16

The Luminescence of ZnO under High One‐ and Two‐Quantum Excitation

C. Klingshirn · physica status solidi (b) · 1975 · 598 citations

Natural Sciences, Materials Science, Physics +17

Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

Tadatsugu Minami, Hidehito Nanto, Shinzo Takata · Japanese Journal of Applied Physics · 1984 · 548 citations

Natural Sciences, Materials Engineering, Materials Science +17

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim et al. · Journal of Applied Physics · 1993 · 418 citations

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