Journal of Applied Physics · 1988 · 52 citations · 8 references
Silicon-based Alloy FilmsEngineeringThin Film Process TechnologySilicon On InsulatorBulk DefectsNanoelectronicsBulk Defect DensitiesHydrogenated Amorphous SiliconThin Film ProcessingMaterials ScienceMaterials EngineeringPhysicsCrystalline DefectsDefect FormationSemiconductor Device FabricationMicroelectronicsSurface ScienceApplied PhysicsElectron Spin ResonanceThin FilmsAmorphous Solid
The surface and bulk defects in a-Si:H, a-Si1−xCx:H, and a-Si1−xNx:H films were investigated by electron spin resonance (ESR) and constant photocurrent method. The thickness of the surface defective layer in a-Si:H films was determined for the first time by ESR. Applying various surface treatments, the free-surface layer proved to be much more defective than the interface layer. Both surface and bulk defect densities in a-Si1−xCx:H and a-Si1−xNx:H alloy films were also determined by ESR. The origin of the surface states is discussed, and the experimental results are explained by a simplified model of the distribution of surface defects.
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Density of the gap states in undoped and doped glow discharge a-Si:H
M. Vaněček, J. Kočka, J. Stuchlı́k et al. · Solar Energy Materials · 1983 · 368 citations