Calculation of critical-layer-thickness and strain relaxation in GexSi1−x strained layers with interacting 60 and 90° dislocations

Materials science and technology

Advanced Materials · 1992 · 864 citations

Natural Sciences, Materials Engineering, Materials Science +12

Ge<i>x</i>Si1−<i>x</i>/Si strained-layer superlattice grown by molecular beam epitaxy

J. C. Bean, L. C. Feldman, A. T. Fiory et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 676 citations

Engineering, Materials Engineering, Materials Science +17

Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

J. W. Matthews, Sebastian Mäder, T. B. Light · Journal of Applied Physics · 1970 · 592 citations

Natural Sciences, Materials Science, Physics +17

Relaxation of strained-layer semiconductor structures via plastic flow

Brian W. Dodson, Jeffrey Y. Tsao · Applied Physics Letters · 1987 · 552 citations

Natural Sciences, Materials Engineering, Materials Science +17

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

Engineering, Electrical Engineering, Materials Science +17