Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 38 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingEpitaxial GrowthRare-earth-doped MaterialsSemiconductor Crystal GrowthArsenic ChemistryCrystal DopingIn-situ DopingMolecular Beam EpitaxyPhotoluminescencePhotoluminescence Spectroscopy
We have been able to incorporate As into molecular-beam epitaxy (MBE) grown ZnSe in the range of 1017–1021 atoms/cm3 using Zn3As2 as the As source. This contrasts with very low As levels we obtained using an As cracker cell. The As incorporation is highly nonlinear with Zn3As2 flux and depends on the excess Se used. Several samples doped with Zn3As2 show low temperature photoluminescence with near band edge emission dominated by shallow acceptor levels. We will describe the details of several growth variations studied and their influence on As incorporation.