S. M. Shibli̇

Hole confinement effects on multiple Si δ doping in GaAs

S. M. Shibli̇, L. M. R. Scolfaro, J. R. Leite et al. · Applied Physics Letters · 1992 · 45 citations · Full text

Engineering, Materials Science, Physics +17

Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy

B. J. Skromme, S. M. Shibli̇, J. L. de Miguel et al. · Journal of Applied Physics · 1989 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Planar doping with gallium of molecular beam epitaxial ZnSe

J. L. de Miguel, S. M. Shibli̇, M. C. Tamargo et al. · Applied Physics Letters · 1988 · 40 citations

Engineering, Materials Engineering, Materials Science +17

Arsenic doped ZnSe grown by molecular-beam epitaxy

S. M. Shibli̇, M. C. Tamargo, B. J. Skromme et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 38 citations

Engineering, Materials Engineering, Materials Science +13

The structure of the ZnSe(100)<i>c</i>(2×2) surface

H. H. Farrell, M. C. Tamargo, S. M. Shibli̇ et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 35 citations

Natural Sciences, Materials Science, Physics +17