H. H. Farrell

Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometry

H. H. Farrell, C. J. Palmstro m · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 254 citations

Semiconductors, Materials Science, Rheed Patterns +14

Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces

H. H. Farrell, J. P. Harbison, L. D. Peterson · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 182 citations

Materials Science, Ii-vi Semiconductor, Epitaxial Growth +12

High-resolution electron-energy-loss spectroscopy studies of GaAs (100) surfaces

Daniel Frankel, Changyuan Yu, J. P. Harbison et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 132 citations · Full text

Engineering, Chemistry, Sufficient Annealing +16

Diffraction of Photoelectrons Emitted from Core Levels of Te and Na Atoms Adsorbed on Ni(001)

D.P. Woodruff, D. Norman, B.W. Holland et al. · Physical Review Letters · 1978 · 125 citations

Engineering, Electron Diffraction, Core Levels +18

Mean Displacement of Surface Atoms in Palladium and Lead Single Crystals

R. M. Goodman, H. H. Farrell, Gábor A. Somorjai · The Journal of Chemical Physics · 1968 · 116 citations

Engineering, Chemistry, Root-mean-square Displacements +17