J. L. de Miguel

Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ<i>-</i>X mixing

M.-H. Meynadier, R. E. Nahory, J. M. Worlock et al. · Physical Review Letters · 1988 · 217 citations

Quantum Science, Superconducting Material, Gaas-alas Superlattices +15

Structural characterization of GaAs/ZnSe interfaces

M. C. Tamargo, J. L. de Miguel, D. M. Hwang et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 104 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +13

Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED Oscillations

F. Briones, D. Golmayo, L. González et al. · Japanese Journal of Applied Physics · 1985 · 62 citations

Engineering, Mbe Growth, Surface Stoichiometry +16

Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength

U. Koren, M. Oron, Matthew Young et al. · Electronics Letters · 1990 · 56 citations

Quantum Science, Photonics, Quantum Photonics +12

Photoluminescence characterization of ZnSe doped with Ga by bulk and planar doping techniques in molecular-beam epitaxy

B. J. Skromme, S. M. Shibli̇, J. L. de Miguel et al. · Journal of Applied Physics · 1989 · 41 citations

Materials Science, Excitonic Transitions, Electrical Engineering +14