Preparation and study on the drift and hysteresis properties of the tin oxide gate ISFET by the sol–gel method

Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements

P. Bergveld · IEEE Transactions on Biomedical Engineering · 1970 · 2.1K citations

Engineering, Biomedical Engineering, Electrical Engineering +17

Methods of isfet fabrication

Tadayuki Matsuo, M. Esashi · Sensors and Actuators · 1981 · 343 citations

Engineering, Electrical Engineering, Microfabrication +10

A physical model for drift in pH ISFETs

Shahriar Jamasb, Scott D. Collins, R. L. Smith · Sensors and Actuators B Chemical · 1998 · 237 citations

Engineering, Electrical Engineering, Physics +11

The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs

Luc Bousse, Piet Bergveld · Sensors and Actuators · 1984 · 197 citations · Full text

Engineering, Electrical Engineering, Materials Science +11

Comparison of the hysteresis of Ta2O5 and Si3N4 pH-sensing insulators

Luc Bousse, Shahriar Mostarshed, B. van der Schoot et al. · Sensors and Actuators B Chemical · 1994 · 180 citations

Engineering, Materials Engineering, Materials Science +9