Sulfur-passivation mechanism analysis of GaInAsSb photodetectors

Abstract

Sulfur passivation of GaInAsSb photodetectors was studied in terms of Auger electron spectroscopy and x-ray photoelectron spectroscopy. The experimental results showed that Sb–S and In–S bonds exist on the sulfur-passivated GaInAsSb surfaces. The reverse dark current of the photodetectors was reduced and the peak detectivity reached 2.83×1010 cm Hz1/2 W−1 after passivation.