High detectivity InGaAsSb <i>pin</i> infraredphotodetectorfor blood glucose sensing

Abstract

A molecular beam epitaxy grown GalnAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 µm wavelength range with –0.3 V bias, 40 µA dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6 × 1010 cm·Hz1/2/W reported for a GaInAsSb detector. The measured responsivity compares well with k·p calculations.