Applied Physics Letters · 2000 · 56 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ChemistrySurface ScienceDopingSemiconductor Device MaterialsSemiconductor SurfacesSurface PassivationSurface PhysicsX-ray Photoelectron SpectroscopyDefect PassivationGallium NitrideGallium Nitride (Gan) MaterialsNative Oxide FormationNative Oxide LayersNative Oxide PassivationNative Oxide RemovalPassivation
We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
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