Applied Physics Letters · 1994 · 63 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceLuminescent MaterialsOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor SurfacesSurface PassivationSurface PhysicsAntimonide SemiconductorsElectrical PropertiesPassivation MechanismsPassivation Of SemiconductorsPassivation TechniquesPhotoluminescenceSurface RecombinationSurface State Density Reduction
Improvement in optical and electrical properties were observed after sulphur passivation of gallium antimonide surface. Enhancement of photoluminescence intensity up to 60 times, reduction in surface state density by two orders of magnitude, and reverse leakage currents by a factor of 20–30 were obtained as a result of surface passivation. While the reduction of surface recombination is attained, the surface is not unpinned.
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Gallium antimonide device related properties
A. G. Milnes, A. Y. Polyakov · Solid-State Electronics · 1993 · 202 citations