Sulphur passivation of gallium antimonide surfaces

Abstract

Improvement in optical and electrical properties were observed after sulphur passivation of gallium antimonide surface. Enhancement of photoluminescence intensity up to 60 times, reduction in surface state density by two orders of magnitude, and reverse leakage currents by a factor of 20–30 were obtained as a result of surface passivation. While the reduction of surface recombination is attained, the surface is not unpinned.