Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations

Engineering, Electrical Engineering, Materials Science +15

InGaAs-GaAs quantum-dot lasers

D. Bimberg, N. Kirstaedter, N. N. Ledentsov et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1997 · 570 citations

Engineering, Electrical Engineering, Materials Science +17

Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

F. Heinrichsdorff, M. Mao, N. Kirstaedter et al. · Applied Physics Letters · 1997 · 321 citations

Engineering, Materials Engineering, Materials Science +17

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

R.L. Sellin, Ch. Ribbat, Marius Grundmann et al. · Applied Physics Letters · 2001 · 230 citations

Engineering, Electrical Engineering, Materials Science +17

InAs/InGaAs/GaAs quantum dot lasers of 1.3  µm range with high (88%) differential efficiency

A. R. Kovsh, N. A. Maleev, A. E. Zhukov et al. · Electronics Letters · 2002 · 137 citations

Engineering, Electrical Engineering, Materials Science +17