High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

GaN-based optoelectronics on silicon substrates

A. Krost, A. Dadgar · Materials Science and Engineering B · 2002 · 296 citations

Engineering, Materials Engineering, Materials Science +14

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 271 citations

Engineering, Materials Engineering, Materials Science +17

Anti-Surfactant in III-Nitride Epitaxy –Quantum Dot Formation and Dislocation Termination–

Satoru Tanaka, Misaichi Takeuchi, Yoshinobu Aoyagi · Japanese Journal of Applied Physics · 2000 · 166 citations

Engineering, Materials Engineering, Materials Science +17

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar et al. · Applied Physics Letters · 2002 · 129 citations

Engineering, Materials Engineering, Materials Science +17