Photovoltaic and optoelectronic properties of InAs(100)-based photoconductive cells with quantum dots and nanopits

Quantum dot solar cells

Arthur J. Nozik · Physica E Low-dimensional Systems and Nanostructures · 2002 · 2.6K citations

Engineering, Physics, Quantum Device +5

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 589 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Quantum dot solar cells

V. M. Aroutiounian, S. Petrosyan, A. L. Khachatryan et al. · Journal of Applied Physics · 2001 · 231 citations

Quantum Photonics, Engineering, Semiconductor Materials +18

Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

P. Bhattacharya, Xiaohua Su, Subhananda Chakrabarti et al. · Applied Physics Letters · 2005 · 204 citations · Full text

Quantum Photonics, Engineering, Optoelectronic Devices +19

Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

Hiroki Ishikuro, Toshiro Hiramoto · Applied Physics Letters · 1997 · 192 citations

Categoryquantum Electronics, Engineering, Semiconductor Device +16