K. M. Gambaryan

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

K. M. Gambaryan, V. M. Aroutiounian, Torsten Boeck et al. · Journal of Physics D Applied Physics · 2008 · 25 citations

Island Size, Engineering, Semiconductor Nanostructures +19

Interaction and Cooperative Nucleation of InAsSbP Quantum Dots and Pits on InAs(100) Substrate

K. M. Gambaryan · Nanoscale Research Letters · 2009 · 24 citations · Full text

Engineering, Semiconductor Nanostructures, Semiconductors +16

Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application

V.A. Gevorkyan, V. M. Aroutiounian, K. M. Gambaryan et al. · Thin Solid Films · 2004 · 21 citations

Materials Science, Low Band-gap P-inaspsb/n-inas, Engineering +6

Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

K. M. Gambaryan, V. M. Aroutiounian, V. G. Harutyunyan et al. · Applied Physics Letters · 2012 · 17 citations · Full text

Magnetic Properties, High Resolution, Engineering +16

The Ostwald ripening at nanoengineering of InAsSbP spherical and ellipsoidal quantum dots on InAs (100) surface

V. M. Aroutiounian, K. M. Gambaryan, V. G. Harutyunyan et al. · Journal of Contemporary Physics (Armenian Academy of Sciences) · 2012 · 16 citations