Torsten Boeck

Beyond the ensemble average: X-ray microdiffraction analysis of single SiGe islands

Cristian Mocuta, J. Stangl, K. Mundboth et al. · Physical Review B · 2008 · 70 citations

X-ray Crystallography, X-ray Spectroscopy, Engineering +23

Scanning x-ray diffraction with 200nm spatial resolution

M. Hanke, M. Dubslaff, M. Schmidbauer et al. · Applied Physics Letters · 2008 · 51 citations

X-ray Crystallography, Engineering, Microscopy +16

Origin and evolution of background impurity content of materials used in the preparation of (Hg, Cd) Te LPE layers on CdTe substrates

P. Rudolph, Manfred Mühlberg, M. Neubert et al. · Journal of Crystal Growth · 1992 · 33 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +10

Ge in-plane nanowires grown by MBE: influence of surface treatment

Roman Bansen, Jan Schmidtbauer, Robert Gurke et al. · CrystEngComm · 2013 · 30 citations

Engineering, Surface Nanotechnology, Ge Nanowire Growth +17

Equilibrium shape of SiGe Stranski–Krastanow islands on silicon grown by liquid phase epitaxy

M. Hanke, M. Schmidbauer, Ralf Köhler et al. · Applied Physics Letters · 2004 · 26 citations

Materials Science, Sige Stranski–krastanow, Engineering +14