Japanese Journal of Applied Physics · 1987 · 13 citations · 5 references
Natural SciencesChemistryMaterials ScienceSpectroscopySurface ChemistrySurface ScienceAuger Electron SpectroscopyLaser PhysicsLaser Surface ProcessingSemiconductor SurfacesSurface PhysicsSurface SpectroscopyArsenic ChemistryAuger Electron Spectroscopy QuantificationEtchingGallium ArsenideLaser Surface EtchingLaser Surface ModificationScan SpeedStoichiometric Effects
Gallium arsenide surfaces after laser-induced thermochemical etching in a CCl 4 atmosphere were investigated by Auger electron spectroscopy. The laser-etched surfaces were deficient in arsenic and the excess gallium was found in a depth down to 20 nm from the etched surface for a laser power from 0.3 to 0.5 W at a scan speed of 6-30 µm/s. The thickness of the arsenic-deficient layers depended on both laser power and scan speed.
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