Japanese Journal of Applied Physics · 1985 · 14 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLaser Material ProcessingLaser PhysicsLaser SpectroscopyLaser Surface ProcessingResidual StressStrain EngineeringEtchingGallium ArsenidePyrolysisRaman ScatteringResidual StrainResidual Strain MeasurementStrain Evolution
Residual local strain in GaAs induced by laser pyrolytic etching in a CCl 4 gas atmosphere has, for the first time, been observed by microprobe Raman scattering and ion channeling measurements. It was found that local strain of 8.6×10 -3 , corresponding to tensile stress of 6.4 kbar, remained in the groove etched by laser pyrolysis at a CCl 4 pressure of 32 Torr with a laser power of 0.5 W, while such strain was not induced for a laser power at and below 0.4 W.
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Effect of static uniaxial stress on the Raman spectrum of silicon
E. Anastassakis, A. Pinczuk, E. Burstein et al. · Solid State Communications · 1970 · 598 citations
Effect of static uniaxial stress on the Raman spectrum of silicon
E. Anastassakis, A. Pinczuk, E. Burstein et al. · Solid State Communications · 1993 · 224 citations · Full text
Dechannelling Cylinder of Dislocations
Yves Quéré · physica status solidi (b) · 1968 · 158 citations