Japanese Journal of Applied Physics · 1990 · 152 citations · 7 references
Natural SciencesChemistryMaterials SciencePlasma PhysicsSpectroscopySurface ScienceHigh-temperature PlasmasInfrared SpectroscopyLaser-plasma InteractionsPlasma-surface InteractionsSemiconductor Device MaterialsSilicon MaterialsSilicon ChemistryThin-film Growth KineticsThin-film Growth Mechanisms
Infrared diode laser absorption spectroscopy (IRLAS) was applied to the measurement of SiH 3 in a RF silane P-CVD chamber with parallel plate electrodes. The spatial distribution of SiH 3 radicals between the electrodes was measured to obtain the incident flux density of SiH 3 to the electrode surface. The growth rate of a-Si:H was also measured in the same plasma. These data were used to estimate the contribution of SiH 3 to a-Si:H thin-film growth.
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