IEEE Electron Device Letters · 1989 · 43 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsChemical Vapor DepositionDefects In Electronic MaterialsSemiconductor Device MaterialsThin Film AnnealingThin-film DepositionThin-film MaterialsAnnealing EffectsDefect DensityDefect FormationLeakageLeakage CurrentLeakage Current ReductionStep CoverageUltraviolet Irradiation
A capacitor technology developed to obtain extremely thin Ta/sub 2/O/sub 5/ dielectric film with an effective SiO/sub 2/ film thickness down to 3 nm (equivalent to 11 fF/ mu m/sup 2/) for a 1.5-V, low-power, high-density, 64-Mb DRAM is discussed. The Ta/sub 2/O/sub 5/ has low leakage current, low defect density, and excellent step coverage. The key process is two-step annealing after the deposition of the film by thermal chemical vapor deposition (CVD). The first step involves ozone (O/sub 3/) annealing with ultraviolet light irradiation, which reduces the leakage current. The second step is dry oxygen (O/sub 2/) annealing, which decreases the defect density. A more significant reduction in the leakage current is attained by the combination of the two annealing steps.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Novel high density, stacked capacitor MOS RAM
Mitsumasa Koyanagi, H. Sunami, N. Hashimoto et al. · 1978 · 70 citations
Engineering, Computer Engineering, Electrical Engineering +13
A corrugated capacitor cell (CCC)
H. Sunami, T. Kure, N. Hashimoto et al. · IEEE Transactions on Electron Devices · 1984 · 58 citations