Concepedia

Growth of MBE ZnSxSe1−x using a novel electrochemical sulphur source

K. A. Prior, J.M. Wallace, John Hunter, S.J.A. Adams, M. Haines, Mouna Saoudi, B.C. Cavenett

Journal of Crystal Growth · 1990 · 16 citations · 9 references

DOI

Concepts

References

9

Structural characterization of GaAs/ZnSe interfaces

M. C. Tamargo, J. L. de Miguel, D. M. Hwang et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 104 citations

, , +13

Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxy

D. A. Cammack, R. J. Dalby, Hugo J. Cornelissen et al. · Journal of Applied Physics · 1987 · 66 citations

, , +15

Recent advances in the molecular beam epitaxy of the wide-bandgap semiconductor ZnSe and its superlattices

R. L. Gunshor, L. A. Kolodziejski · IEEE Journal of Quantum Electronics · 1988 · 51 citations

, , +15

Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy

Graham J. Davies, D. A. Andrews, R. Heckingbottom · Journal of Applied Physics · 1981 · 34 citations

, , +12

The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy

D. A. Andrews, R. Heckingbottom, Graham J. Davies · Journal of Applied Physics · 1983 · 30 citations

, , +16