IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1995 · 54 citations · 11 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationElectric CircuitsAccuracyCircuit SimulationCompact ModelingDiode ModelingHysteresisHysteresis EffectsLarge-signal ModelingPhysics-based Device Modeling
A new resonant-tunnel diode (RTD) large-signal DC model suitable for PSPICE simulation is presented in this paper. For better accuracy, the model equations are deliberately chosen through the combination of Gaussian and/or exponential functions, and it can be easily implemented in PSPICE using the FUNCTION statement. Most of the associated parameters required in this new model have explicit relations to the measured I-V curves, and can be easily extracted. This new DC model has been successfully applied to simulating single RTD devices, and a RTD-based three-state memory circuit. Compared to other RTD DC models, the presented model gives better accuracy and has less convergence problems. In addition, the new model can be used to simulate hysteresis effect, and can easily incorporate AC effects.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
E. R. Brown, T. C. L. G. Sollner, C. D. Parker et al. · Applied Physics Letters · 1989 · 308 citations
Federico Capasso, S. Sen, A.Y. Cho et al. · IEEE Electron Device Letters · 1987 · 77 citations