Zheng-Gang Yan

A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load

Zheng-Gang Yan, M. Jamal Deen · IEEE Journal of Solid-State Circuits · 1992 · 47 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

High frequency noise of MOSFETs. II. Experiments

C.H. Chen, M. Jamal Deen, Zheng-Gang Yan et al. · Solid-State Electronics · 1998 · 40 citations · Full text

Electrical Engineering, Engineering, High-frequency Device +6

Physically-based method for measuring the threshold voltage of MOSFETs

Zheng-Gang Yan, M. Jamal Deen · IEE Proceedings G Circuits Devices and Systems · 1991 · 37 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Substrate bias effects on drain-induced barrier lowering in short-channel PMOS devices

M. Jamal Deen, Zheng-Gang Yan · IEEE Transactions on Electron Devices · 1990 · 27 citations

Device Modeling, Electrical Engineering, Substrate Bias Effects +12

A compact tunneling current and collector breakdown model

M. Schröter, Zheng-Gang Yan, T.Y. Lee et al. · 2002 · 19 citations

Device Modeling, Electrical Engineering, Base-emitter Tunneling +14