Electron microscope studies of the structure and propagation of the Pd₂Si/(111)Si interface

Abstract

Abstract The structure of the epitaxial Pd2Si/(111)Si interface has been investigated by transmission electron microscopy. Observations normal to the interface using the weak-beam technique demonstrate the presence of misfit dislocations and support a model where atomically smooth regions of the interface are coherent and where misfit dislocations are associated with interfacial steps. High-resolution lattice images of (110) cross-sectional specimens are consistent with this model, showing characteristic image features which may be explained using theoretical multislice image simulations. It is shown that there are additional image features attributable to palladium-rich surface overlayers present on the cross-sections. The determination of the atomic structure of the interface is discussed.