Ellipsometric study of tellurium implanted silicon

Abstract

Abstract Ellipsometric parameters as a function of the dose (D = 2.1013 − 2.1015 ions cm−2) and annealing temperature have been measured on the silicon implanted with 30 keV Te ions. Obtained information on lattice disorder are to a great extent comparable with those of other methods, e.g. backscattering technique. Moreover optical constants of a damage surface layer may be estimated.