Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification

Jie Bai, Michael Dudley, Wenhong Sun et al. · Applied Physics Letters · 2006 · 108 citations

Natural Sciences, Materials Engineering, Materials Science +16

A study of dislocations in AlN and GaN films grown on sapphire substrates

Jie Bai, Ti Wang, P. J. Parbrook et al. · Journal of Crystal Growth · 2005 · 84 citations

Natural Sciences, Materials Engineering, Materials Science +12

Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE

Masataka Imura, Koji Nakano, Tsukasa Kitano et al. · physica status solidi (a) · 2006 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +15

Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates

Yasuo Ohba, Hiroaki Yoshida, Rie Sato · Japanese Journal of Applied Physics · 1997 · 50 citations

Engineering, Materials Engineering, Materials Science +17