Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Akitoshi Ishizaka, Y. Shiraki · Journal of The Electrochemical Society · 1986 · 1.6K citations

Engineering, Materials Engineering, Materials Science +17

Polar-on-nonpolar epitaxy

H. Kroemer · Journal of Crystal Growth · 1987 · 506 citations

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Engineering, Electrical Engineering, Materials Science +17

A new type of source generating misfit dislocations

Wim J. H. Hagen, H. P. Strunk · Applied Physics B · 1978 · 190 citations

Natural Sciences, Materials Engineering, Materials Science +7

Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

I. Németh, Bernardette Kunert, W. Stolz et al. · Journal of Crystal Growth · 2007 · 166 citations

Natural Sciences, Materials Engineering, Materials Science +14