Polar-on-nonpolar epitaxy

Polar heterojunction interfaces

Walter A. Harrison, E. A. Kraut, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1978 · 628 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Engineering, Electrical Engineering, Materials Science +17

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

W. I. Wang · Applied Physics Letters · 1984 · 249 citations

Engineering, Materials Engineering, Materials Science +17

LEED study of the stepped surface of vicinal Si (100)

Ray Kaplan · Surface Science · 1980 · 234 citations

Natural Sciences, Materials Engineering, Materials Science +11

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer, W. T. Masselink, John F. Klem et al. · Journal of Applied Physics · 1985 · 194 citations

Engineering, Electrical Engineering, Materials Science +16